| PART |
Description |
Maker |
| BB731S |
Silicon epitaxial planar capacitance diodes with very wide effective capacitance
|
TY Semiconductor Co., Ltd
|
| KA2139 |
Tantalum Molded High Capacitance Capacitor; Capacitance: 10uF; Voltage: 16V; Packaging: Tape & Reel 三通道RGB视频放大
3 CHANNEL R.G.B VIDEO AMPLIFIER
|
Samsung Semiconductor Co., Ltd.
Samsung Electronic
|
| G7881-21 G7881-22 G7881-23 G7881-32 G7881-44 G8339 |
Supply voltage:0.3-5.5V; InGaAs PIN photodiode with preamp: receptacle type, 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH
Aluminum Snap-In Capacitor; Capacitance: 100uF; Voltage: 400V; Case Size: 20x30 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 6800uF; Voltage: 25V; Case Size: 25x25 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 390uF; Voltage: 400V; Case Size: 35x30 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 150uF; Voltage: 400V; Case Size: 20x40 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 680uF; Voltage: 400V; Case Size: 35x45 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 100uF; Voltage: 400V; Case Size: 22x25 mm; Packaging: Bulk 铟镓砷PIN光电二极管和前置放大
Aluminum Snap-In Capacitor; Capacitance: 390uF; Voltage: 400V; Case Size: 25x50 mm; Packaging: Bulk 铟镓砷PIN光电二极管和前置放大
Aluminum Snap-In Capacitor; Capacitance: 470uF; Voltage: 250V; Case Size: 30x25 mm; Packaging: Bulk 铟镓砷PIN光电二极管和前置放大
FIBER OPTIC RECEIVER, 1250Mbps, PANEL MOUNT, LC CONNECTOR
Aluminum Snap-In Capacitor; Capacitance: 68uF; Voltage: 400V; Case Size: 20x25 mm; Packaging: Bulk
|
HAMAMATSU[Hamamatsu Corporation]
Hamamatsu Photonics K.K.
|
| Z8L18008FEC Z8L18008VEC Z8L18008PEC Z8L18010FSC Z8 |
Microprocessor Unit
Z8018x Family MPU
Niobium Oxide Capacitor; Capacitor Type:Solid; Voltage Rating:4VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:10uF; Capacitance Tolerance: /- 20%; ESR:2.2ohm; Leaded Process Compatible:Yes; Operating Temp. Max:105 C RoHS Compliant: Yes
CONN RING INSUL 26-24 AWG #8
CONN RING INSUL 26-24 AWG #6
CONN RING INSUL 26-24 AWG #2 8-BIT, MICROPROCESSOR, PDIP64
ENHANCED Z180 MICROPROCESSOR
Niobium Oxide Capacitor; Capacitor Type:Solid; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:6.8uF; Capacitance
dielectric type:Niobium Oxide; Case style:P; Depth, external:1.5mm; Length / Height, RoHS Compliant: Yes
Niobium Oxide Capacitor; Capacitor Type:Solid; Voltage Rating:2.5VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:15uF; Capacitance
Niobium Oxide Capacitor; Capacitor Type:Solid; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:4.7uF; Capacitance
|
ZILOG INC
Zilog Inc.
Zilog.
ZiLOG, Inc.
|
| SMLG160 SMLG160A SMLJ22A SMLG30 SMLG30A SMLJ65A SM |
Tantalum Capacitor; Capacitance:0.47uF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Package/Case:V; Terminal Type:Axial Leaded; Leaded
UNIDIRECTIONAL AND BIDIRECTIONAL SURFACE MOUNT
From old datasheet system
|
MICROSEMI CORP-SCOTTSDALE
MICROSEMI[Microsemi Corporation]
http://
|
| GCX1205-23 GCX1217-23 GCX1206-23 GCX1213-23 GCX120 |
10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
5.6 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
1.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VARACTOR DIODES Surface Mount SOT23 Abrupt Junction TM
3.9 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
MICROSEMI CORP-LOWELL
Microsemi Corporation
|
| GS-R4840NV |
; Capacitance:1.2pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:150V; Package/Case:0605; Series:SQ; Dielectric Material:Ceramic; Leaded Process Compatible:Yes; Mounting Type:PCB Surface Mount 36糯负开关稳压器
36 W NEGATIVE SWITCHING REGULATOR
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| BB664 Q62702-B0909 Q62702-B0908 |
Silicon Variable Capacitance Diode (For VHF TV-tuners High capacitance ratio Low series inductance Low series resistance) 硅变容二极管（甚高频电视信号接收器高电容率低串联电感低串联电阻）
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BB200 BB200_1 |
Low-voltage variable capacitance double diode 70 pF, 18 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-236AB
From old datasheet system
|
NXP Semiconductors N.V.
Philipss
Philips Semiconductors
|
| HVU363B |
Diodes>Variable Capacitance
Variable Capacitance Diode for TV tuner
|
Renesas Electronics Corporation
|
| HVL355CM |
Diodes>Variable Capacitance
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| LSG3351 Q62703-Q2297 LSG_3351 LSG3351-HO |
3 mm (T1) MULTILED / Diffused
Fail-Safe Floating Electrode MLCC / FE-CAP / X7R Dielectric; Capacitance [nom]: 0.1uF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance
3 mm (T1) MULTILED, Diffused
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
